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TM124BBK32-10

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TM124BBK32-10

Fast Page DRAM Module, 1MX32, 100ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TM124BBK32-10 is a Fast Page DRAM Module featuring a 1M x 32 memory organization, delivering a 33.55 megabit density. This module operates with CMOS technology and offers an access time of 100 nanoseconds. It supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes, with a requirement for 1024 refresh cycles. The I/O type is COMMON, and the module is configured with 32-bit data width and a 1M word count. It utilizes an asynchronous operating mode and provides 3-state output characteristics. The TM124BBK32-10 operates within a temperature range of 0°C to 70°C and requires a supply voltage between 4.5V and 5.5V. This component is suitable for applications in industrial and consumer electronics.

Additional Information

Series: TM124BBK32RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Alternate_Memory_Width16
I_O_TypeCOMMON
JESD_30_CodeR-XSMA-N72
Memory_Density33554432.0000000000000000
Memory_IC_TypeFAST PAGE DRAM MODULE
Memory_Organization1MX32
Memory_Width32
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals72
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSIMM
Package_Equivalence_CodeSSIM72
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles1024
Seated_Height_Max25.5778
Self_RefreshNo
Standby_Current_Max0.008000000000000
Supply_Current_Max520.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionSingle

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