TM024EAD9-10
Fast Page DRAM Module, 1MX9, 100ns, CMOSManufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TM024EAD9 is a Fast Page DRAM Module designed for high-speed memory applications. This component, part number TM024EAD9-10, offers a memory organization of 1Mx9 and a maximum access time of 100ns. Built using CMOS technology, it operates with a supply voltage range of 4.5V to 5.5V. Key features include support for RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes, alongside 512 refresh cycles for data integrity. Its asynchronous operating mode and 3-state output characteristics make it suitable for integration into various system architectures. This memory module finds application in industrial automation, consumer electronics, and telecommunications equipment where efficient and reliable data buffering is critical.
Additional Information
Series: TM024EAD9RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 100.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-XSMA-N30 |
| Memory_Density | 9437184.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM MODULE |
| Memory_Organization | 1MX9 |
| Memory_Width | 9 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 30 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 512 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Single |
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