SMJ4C1024-12SV
Fast Page DRAM, 1MX1, 120ns, CMOS, CZIP20Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments SMJ4C1024-12SV is a 1Mbit Fast Page DRAM from the SMJ4C1024 series. This component features an organization of 1Mx1, delivering a maximum access time of 120ns. It operates using CMOS technology and supports Fast Page, RAS Only, CAS Before RAS, and Hidden Refresh modes. The device is housed in a 20-lead Ceramic ZIP (CZIP) package with through-hole mounting. Designed for demanding applications, this DRAM is suitable for use in industrial control, telecommunications, and data acquisition systems. It operates from a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V, and maintains functionality across an extended temperature range of -55°C to +125°C.
Additional Information
Series: SMJ4C1024RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 26.6700 |
| Width | 2.9200 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-CZIP-T20 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | ZIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 512 |
| Seated_Height_Max | 10.9200 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | ZIG-ZAG |
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