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SMJ44C256-15FQMT

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SMJ44C256-15FQMT

Fast Page DRAM, 256KX4, 150ns, MOS, CDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments SMJ44C256-15FQMT is a 1-Megabit Fast Page Mode DRAM organized as 256K words by 4 bits. This MOS technology component features a maximum access time of 150 ns and supports CAS BEFORE RAS REFRESH functionality. Operating asynchronously, it is designed for a supply voltage range of 4.5V to 5.5V, with a nominal 5V requirement. The device is housed in a 20-terminal CDSO (Ceramic Dual Small Outline) package, specified by JESD-30 code R-CDSO-N20. Its construction with ceramic, metal-sealed cofired material and its MIL-PRF-38535 screening level indicate suitability for demanding applications. This component is prevalent in aerospace, defense, and industrial sectors requiring high reliability and robust performance. The SMJ44C256 series offers efficient memory solutions for these critical systems.

Additional Information

Series: SMJ44C256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width8.8900
TechnologyMOS
Access_ModeFAST PAGE
Access_Time_Max150.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
JESD_30_CodeR-CDSO-N20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeSON
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Screening_Level_Reference_StandardMIL-PRF-38535
Seated_Height_Max2.3400
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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