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SMJ44C256-12FQMT

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SMJ44C256-12FQMT

Fast Page DRAM, 256KX4, 120ns, MOS, CDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments SMJ44C256-12FQMT is a 256K x 4-bit Fast Page Mode Dynamic Random Access Memory (DRAM) device. Featuring a 120ns maximum access time, this MOS technology component utilizes the CAS-before-RAS refresh mechanism for efficient operation. The memory organization is 256K words by 4 bits, providing a total density of 1048576 bits. This device is housed in a 20-terminal ceramic, metal-sealed cofired small outline package (JESD30 Code: R-CDSO-N20) suitable for surface mounting, with a terminal pitch of 1.27mm. Operating from a supply voltage range of 4.5V to 5.5V, it supports an asynchronous operating mode. The SMJ44C256 series components are designed for demanding applications, including military and aerospace systems, where high reliability and performance are critical.

Additional Information

Series: SMJ44C256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width8.8900
TechnologyMOS
Access_ModeFAST PAGE
Access_Time_Max120.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
JESD_30_CodeR-CDSO-N20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeSON
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Screening_Level_Reference_StandardMIL-PRF-38535
Seated_Height_Max2.3400
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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