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SMJ44C256-10FQM

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SMJ44C256-10FQM

Fast Page DRAM, 256KX4, 100ns, CMOS, CDSO20

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments SMJ44C256-10FQM is a 1Mbit Fast Page Mode DRAM with a memory organization of 256K x 4 bits. This CMOS component offers a maximum access time of 100ns and operates with a nominal supply voltage of 5V, supporting a range of 4.5V to 5.5V. It features CAS BEFORE RAS REFRESH functionality, providing 512 refresh cycles. The device is housed in a 20-lead ceramic, metal-sealed cofired small outline package (CDSO20). This component is suitable for demanding applications requiring reliable memory solutions in harsh environments, including aerospace and defense systems. Its surface-mount design and extended operating temperature range of -55°C to +125°C underscore its suitability for critical circuit designs.

Additional Information

Series: SMJ44C256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width8.8900
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureCAS BEFORE RAS REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-CDSO-N20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeSON
Package_Equivalence_CodeSOLCC20/26,.35
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles512
Screening_Level_Reference_StandardMIL-PRF-38535
Seated_Height_Max2.3400
Standby_Current_Max0.003000000000000
Supply_Current_Max70.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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