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SMJ4464-20JDS

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SMJ4464-20JDS

Page Mode DRAM, 64KX4, 200ns, NMOS, CDIP18

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments SMJ4464-20JDS is a Page Mode DRAM with a memory organization of 64K x 4 bits, offering a total density of 262,144 bits. This NMOS technology component features a maximum access time of 200ns and supports various refresh modes including RAS-only, CAS-before-RAS, and hidden refresh. The SMJ4464 series operates with a supply voltage between 4.5V and 5.5V, typically 5V, and is rated for an extended operating temperature range from -55°C to +110°C. Encased in a ceramic, metal-sealed cofired DIP package (R-CDIP-T18) with 18 through-hole terminals, this component is suitable for demanding applications within the industrial and defense sectors requiring robust memory solutions.

Additional Information

Series: SMJ4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length22.6060
Width7.6200
TechnologyNMOS
Access_ModePAGE
Access_Time_Max200.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-CDIP-T18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max110.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeDIP
Package_Equivalence_CodeDIP18,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles256
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max5.0800
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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