SMJ4464-20FVS
Page Mode DRAM, 64KX4, 200ns, NMOS, CQCC18Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments SMJ4464-20FVS is a 262,144-bit NMOS DRAM organized as 64K words by 4 bits. Featuring page mode operation, this component offers a maximum access time of 200ns. It supports RAS-only, CAS-before-RAS, and hidden refresh modes, with 256 refresh cycles required. The SMJ4464 series operates asynchronously with a supply voltage range of 4.5V to 5.5V, nominal 5V. Packaged in an 18-terminal ceramic quad flat pack (CQFP), it is designed for surface mounting. This memory component is suitable for applications in telecommunications and industrial automation.
Additional Information
Series: SMJ4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 12.3200 |
| Width | 7.2400 |
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-CQCC-N18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 110.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | QCCN |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 2.1800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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