SMJ4464-15FVS
Page Mode DRAM, 64KX4, 150ns, NMOS, CQCC18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments SMJ4464-15FVS is a 64K x 4 NMOS Page Mode DRAM with a maximum access time of 150ns. This component offers multiple refresh modes, including RAS-only, CAS-before-RAS, and hidden refresh, supporting 256 refresh cycles. The device operates asynchronously with a supply voltage range of 4.5V to 5.5V, nominal 5V. It features a 3-state output characteristic and is housed in an 18-terminal ceramic CQCC package. Its robust design and high temperature rating up to 110°C make it suitable for demanding applications in industrial and military sectors. The memory organization of 64K words by 4 bits results in a total density of 262,144 bits.
Additional Information
Series: SMJ4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 12.3200 |
| Width | 7.2400 |
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 150.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-CQCC-N18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 110.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | QCCN |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 2.1800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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