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SMJ4464-12FVS

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SMJ4464-12FVS

Page Mode DRAM, 64KX4, 120ns, NMOS, CQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments SMJ4464-12FVS is a Page Mode DRAM with a memory organization of 64K x 4 bits, providing a total density of 262,144 bits. This NMOS component features a maximum access time of 120ns and operates asynchronously with a nominal supply voltage of 5V. The device supports Page Mode, RAS-only, CAS-before-RAS, and Hidden Refresh modes, enabling efficient data access and refresh operations, with 256 refresh cycles. It is packaged in an 18-terminal Ceramic Quad Flat Chip Carrier (CQCC) with a rectangular shape and metal-sealed cofired construction. The SMJ4464-12FVS is suitable for applications requiring high-speed memory in industrial and military environments, given its operating temperature range of -55°C to 110°C.

Additional Information

Series: SMJ4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.3200
Width7.2400
TechnologyNMOS
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-CQCC-N18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max110.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeQCCN
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Seated_Height_Max2.1800
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionQUAD

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