SMJ4464-12FVL
Page Mode DRAM, 64KX4, 120ns, NMOS, CQCC18Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments SMJ4464-12FVL is a 65,536-word by 4-bit (64K x 4) NMOS Page Mode DRAM. This component features a maximum access time of 120ns and supports RAS-only, CAS-before-RAS, and hidden refresh cycles for efficient data retention. Designed with a CQCC-18 package, it offers asynchronous operation and 3-state output characteristics. This device is suitable for applications requiring high-speed memory access in areas such as industrial automation and telecommunications. The SMJ4464 series is known for its robust performance and reliability.
Additional Information
Series: SMJ4464RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 12.3200 |
| Width | 7.2400 |
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-CQCC-N18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | QCCN |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 2.1800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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