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SMJ44400-10JDBM

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SMJ44400-10JDBM

Fast Page DRAM, 1MX4, 100ns, CMOS, CDIP20

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments SMJ44400 Fast Page DRAM, part number SMJ44400-10JDBM, offers a 4,194,304 bit memory density organized as 1M words by 4 bits. This CMOS component features a maximum access time of 100ns and supports FAST PAGE access mode. It includes CAS BEFORE RAS/HIDDEN REFRESH functionality for efficient memory management. The SMJ44400 series operates within a temperature range of -55°C to +125°C and requires a supply voltage of 4.5V to 5.5V. This component is housed in a 20-lead ceramic dual in-line package (CDIP20) with through-hole mounting. Applications for this memory device span industrial, defense, and aerospace sectors where robust and high-reliability memory solutions are critical.

Additional Information

Series: SMJ44400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length25.4000
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureCAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-CDIP-T20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeDIP
Package_Equivalence_CodeDIP20,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles1024
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max5.0800
Self_RefreshNo
Standby_Current_Max0.004000000000000
Supply_Current_Max80.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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