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SMJ4416-12FGE

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SMJ4416-12FGE

Page Mode DRAM, 16KX4, 120ns, NMOS, CQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments SMJ4416-12FGE is a 16K x 4 bit Page Mode DRAM. This NMOS memory component offers an asynchronous operating mode with a maximum access time of 120ns. It features RAS-only refresh with 256 refresh cycles. The memory organization is 16,384 words by 4 bits, providing a total density of 65,536 bits. The SMJ4416 series utilizes common I/O and 3-state output characteristics. This device operates within a supply voltage range of 4.5V to 5.5V. The components are housed in an 18-terminal Ceramic Quad Flat No-Lead (CQFN) package, suitable for surface mounting. Typical applications include memory subsystems in industrial and military systems. The operating temperature range is -40°C to +85°C. This part is manufactured by Texas Instruments.

Additional Information

Series: SMJ4416RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length10.7950
Width7.3660
TechnologyNMOS
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-CQCC-N18
Memory_Density65536.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization16KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words16384.0000000000000000
Number_of_Words_Code16k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeQCCN
Package_Equivalence_CodeLCC18,.3X.43
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max1.8500
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionQUAD

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