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SMJ4256-20FVS

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SMJ4256-20FVS

Page Mode DRAM, 256KX1, 200ns, NMOS, CQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments SMJ4256-20FVS is a 256K x 1 bit page mode DRAM with a maximum access time of 200ns. This NMOS device utilizes separate input/output and supports RAS only, CAS before RAS, and hidden refresh modes. It operates asynchronously with a supply voltage range of 4.75V to 5.25V and features 3-state output characteristics. The component is housed in an 18-terminal ceramic cofired chip carrier package (CQCC18) suitable for surface mounting, with a JEDEC code of R-CQCC-N18. Designed for demanding applications, it operates across an extended temperature range from -55°C to +110°C. This part is often utilized in military, aerospace, and industrial systems requiring high reliability and robust performance.

Additional Information

Series: SMJ4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.3200
Width7.2400
TechnologyNMOS
Access_ModePAGE
Access_Time_Max200.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-CQCC-N18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max110.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeQCCN
Package_Equivalence_CodeLCC18,.3X.5
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max2.1800
Supply_Voltage_Max5.25000
Supply_Voltage_Min4.75000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionQUAD

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