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SMJ4256-15FVS

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SMJ4256-15FVS

Page Mode DRAM, 256KX1, 150ns, NMOS, CQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments SMJ4256-15FVS is a 256K x 1 bit page mode DRAM. This NMOS technology component offers a maximum access time of 150ns, supporting RAS-only, CAS-before-RAS, and hidden refresh modes. It features separate I/O and 3-state output characteristics. The device is housed in an 18-terminal ceramic chip carrier (CQCC18) with a rectangular, metal-sealed cofired package. Operating across a temperature range of -55°C to +110°C, it requires a supply voltage between 4.75V and 5.25V. The SMJ4256 series is suitable for applications requiring high-speed data access and storage, including telecommunications infrastructure and industrial control systems.

Additional Information

Series: SMJ4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length12.3200
Width7.2400
TechnologyNMOS
Access_ModePAGE
Access_Time_Max150.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-CQCC-N18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max110.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeQCCN
Package_Equivalence_CodeLCC18,.3X.5
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max2.1800
Supply_Voltage_Max5.25000
Supply_Voltage_Min4.75000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionQUAD

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