SMJ416400-10FNCMT
Fast Page DRAM, 4MX4, 100ns, MOS, CDSO24Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments SMJ416400-10FNCMT is a 16 Megabit Fast Page Mode DRAM with a memory organization of 4M x 4 bits. This component operates with a maximum access time of 100ns and features CAS-before-RAS refresh functionality. Constructed using MOS technology, it is housed within a 24-lead Ceramic, Metal-Sealed Cofired package (JESD-30 Code: R-CDSO-N24). The device supports a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V, and operates across an industrial temperature range of -55°C to 125°C. This memory solution is suitable for applications in industrial and defense sectors requiring robust and reliable memory performance.
Additional Information
Series: SMJ416400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 19.6850 |
| Width | 11.4300 |
| Technology | MOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 100.0000000000000000 |
| Additional_Feature | CAS BEFORE RAS REFRESH |
| JESD_30_Code | R-CDSO-N24 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | SON |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Seated_Height_Max | 3.1800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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