SMJ4164-20JDM
Page Mode DRAM, 64KX1, 200ns, MOS, CDIP16Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments SMJ4164-20JDM is a 65,536-bit (64K x 1) page mode dynamic random-access memory (DRAM) component. This MOS technology device features a maximum access time of 200 nanoseconds. The memory organization is 64K words by 1 bit, with separate I/O. Refresh cycles are 256. This component is housed in a 16-terminal, dual in-line ceramic package (CDIP16) with through-hole mounting. It operates within a temperature range of -55°C to 125°C and has a nominal supply voltage of 5V. The SMJ4164-20JDM is suitable for applications requiring high-density memory in industrial and military systems.
Additional Information
Series: SMJ4164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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