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SMJ4164-20FGE

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SMJ4164-20FGE

Page Mode DRAM, 64KX1, 200ns, NMOS, CQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments SMJ4164-20FGE is a 64K x 1 NMOS Page Mode DRAM. This component offers a maximum access time of 200ns and features RAS-only refresh. Its memory organization is 64K words by 1 bit, with a total memory density of 65,536 bits. The device operates asynchronously with separate I/O and 3-state outputs. It is housed in an 18-terminal Ceramic Quad Flat Pack (CQFP) package with a rectangular body and a terminal pitch of 1.27mm. This component is suitable for applications requiring high-speed random access memory, often found in industrial and military systems requiring extended temperature operation from -40°C to 85°C. It is rated for a supply voltage range of 4.5V to 5.5V.

Additional Information

Series: SMJ4164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length10.7950
Width7.3660
TechnologyNMOS
Access_ModePAGE
Access_Time_Max200.0000000000000000
Additional_FeatureRAS ONLY REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-CQCC-N18
Memory_Density65536.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeQCCN
Package_Equivalence_CodeLCC18,.3X.43
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max1.8500
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionQUAD

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