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SMJ4164-15FGE

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SMJ4164-15FGE

Page Mode DRAM, 64KX1, 150ns, NMOS, CQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

The Texas Instruments SMJ4164-15FGE is a 64K x 1-bit NMOS page mode DRAM, offering a 150ns access time. This component features separate I/O, 3-state outputs, and operates asynchronously. The SMJ4164 series utilizes RAS-only refresh with 256 refresh cycles. Supplied in an 18-terminal Ceramic Cavity Package (CQCC), this surface-mount device is designed for operation across a temperature range of -40°C to +85°C, with a nominal supply voltage of 5V. Common applications for this memory component include industrial control systems, telecommunications infrastructure, and legacy military electronics where robust performance and specific legacy interface compatibility are required. The JEDEC code R-CQCC-N18 denotes its package type.

Additional Information

Series: SMJ4164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length10.7950
Width7.3660
TechnologyNMOS
Access_ModePAGE
Access_Time_Max150.0000000000000000
Additional_FeatureRAS ONLY REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-CQCC-N18
Memory_Density65536.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeQCCN
Package_Equivalence_CodeLCC18,.3X.43
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max1.8500
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionQUAD

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