SMC4060JR
DRAM, 4KX1, 300ns, MOS, CDIP22Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments SMC4060JR is a 4KX1 MOS DRAM with a maximum access time of 300ns. This component features separate I/O with 3-state output characteristics and is housed in a 22-lead ceramic dual in-line package (CDIP22). Designed for operation across a wide temperature range from -55°C to +85°C, it requires a supply current of up to 80mA. The memory organization is 4K words by 1 bit, with 64 refresh cycles. This through-hole component is suitable for applications in industrial and military systems requiring robust memory solutions.
Additional Information
Series: SMC4060RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 4096.0000000000000000 |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Supply_Current_Max | 80.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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