SDRAM-12DGE
Synchronous DRAM, 2MX8, 72.5ns, CMOS, PDSO44Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments SDRAM12 series synchronous DRAM, part number SDRAM-12DGE, offers a 16 Mbit memory density with a 2M x 8 organization. This CMOS component features a maximum access time of 72.5ns and operates with a supply voltage range of 3.0V to 3.6V, typically 3.3V. The device supports auto/self refresh and utilizes a 2-bank page random and burst access mode. Housed in a 44-terminal PDSO package (TSOP2), it is designed for surface mounting with a terminal pitch of 0.8mm. This component is commonly employed in industrial automation, consumer electronics, and telecommunications applications.
Additional Information
Series: SDRAM12RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 18.4100 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | 2 BANK PAGE RANDOM AND BURST |
| Access_Time_Max | 72.5000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G44 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 44 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Refresh_Cycles | 4096 |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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