SDRAM-10DGE
Synchronous DRAM, 2MX8, 60ns, CMOS, PDSO44Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments' SDRAM10 series Synchronous DRAM, part number SDRAM-10DGE, offers a 16 Mbit (2M x 8) memory organization. This device operates with a maximum access time of 60ns and utilizes CMOS technology. Key features include 2-bank page random and burst access modes, supporting auto and self-refresh functionalities with 4096 refresh cycles. The component is housed in a 44-lead PDSO package (TSOP2) with a 0.8mm terminal pitch, designed for surface mounting. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal 3.3V. This memory IC is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: SDRAM10RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 18.4100 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | 2 BANK PAGE RANDOM AND BURST |
| Access_Time_Max | 60.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G44 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 44 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Refresh_Cycles | 4096 |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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