M38510/24004BEX
Page Mode DRAM, 16KX1, 200ns, NMOSManufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments M38510/24004 series M38510-24004BEX is a 16K x 1 NMOS Page Mode DRAM. This asynchronous memory component features a maximum access time of 200ns and supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes. Designed for a nominal supply voltage of 5V, with a range of 4.5V to 5.5V, it operates within an extended temperature range of -55°C to 110°C. The component is housed in a 16-pin DIP package with through-hole terminals. This memory device finds application in industrial control and legacy computing systems requiring cost-effective, high-density memory solutions.
Additional Information
Series: M38510/24004RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 16384.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 16KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 16384.0000000000000000 |
| Number_of_Words_Code | 16k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 110.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
TMS4164-20NL
Page Mode DRAM, 64KX1, 200ns, NMOS, PDIP16
TM248GBK32I-70
EDO DRAM Module, 2MX32, 70ns, CMOS
TMS418160P-80DC
Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO44