CMS409-7
DRAM Card, 4MX18, 70ns, CMOSManufacturer: Texas Instruments
Categories: DRAMs
Quality Control: Learn More
Texas Instruments CMS409-7 is a CMOS DRAM Card featuring a 4M x 18 memory organization, providing a total density of 75,497,472 bits. This asynchronous device operates with a maximum access time of 70ns and utilizes a FAST PAGE access mode. The I/O type is COMMON, and the output characteristics are 3-State. This component is designed for applications requiring high-speed memory access within the 4.75V to 5.25V supply voltage range, with a nominal operating voltage of 5V. It is constructed using CMOS technology and includes 1024 refresh cycles. The CMS409-7 is suitable for use in industrial control systems and data acquisition equipment.
Additional Information
Series: CMS409RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 70.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | X-XXMA-X60 |
| Memory_Density | 75497472.0000000000000000 |
| Memory_IC_Type | DRAM CARD |
| Memory_Organization | 4MX18 |
| Memory_Width | 18 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 60 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 55.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | UNSPECIFIED |
| Package_Equivalence_Code | CARD60 |
| Package_Shape | UNSPECIFIED |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Refresh_Cycles | 1024 |
| Standby_Current_Max | 0.037000000000000 |
| Supply_Current_Max | 1670.000000000000000 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | UNSPECIFIED |
| Terminal_Position | UNSPECIFIED |
Request a Quote
Clients Also Buy
CMS409-8
DRAM Card, 4MX18, 80ns, CMOS
TMS4164-20NL
Page Mode DRAM, 64KX1, 200ns, NMOS, PDIP16
TM248GBK32I-70
EDO DRAM Module, 2MX32, 70ns, CMOS