8201008EX
Page Mode DRAM, 64KX1, 120ns, NMOS, CDIP16Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments 82010 series NMOS DRAM, part number 8201008EX, offers a 64K x 1 memory organization with a page mode access capability. This asynchronous memory component features a maximum access time of 120ns and supports RAS-only, CAS-before-RAS, and hidden refresh modes for efficient data management. The component operates within a supply voltage range of 4.5V to 5.5V and is rated for operation from -55°C to +110°C. Encased in a 16-pin CDIP package (JESD-30 code R-GDIP-T16), it is suitable for through-hole mounting. This DRAM is designed for applications requiring high reliability and performance, often found in industrial control, military, and aerospace systems.
Additional Information
Series: 82010RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | NMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-GDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 110.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Screening_Level_Reference_Standard | MIL-STD-883 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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