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5962-9084702MNA

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5962-9084702MNA

Fast Page DRAM, 1MX4, 100ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments 5962-9084702MNA is a 4Mbit Fast Page DRAM with a 1M x 4 memory organization. This CMOS component features a maximum access time of 100ns and supports RAS-only, CAS-before-RAS, and hidden refresh modes, with 1024 refresh cycles. The device operates asynchronously with a 5V nominal supply voltage (4.5V to 5.5V range) and a standby current of 4mA maximum. It is housed in a 20-pin ZIP package suitable for through-hole mounting. This component is utilized in military and aerospace applications requiring high reliability and extended operating temperature ranges from -55°C to 125°C, meeting MIL-STD-883 screening levels.

Additional Information

Series: 5962-9084702RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length26.6700
Width2.9200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XZIP-T20
Memory_Density4194304.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeZIP
Package_Equivalence_CodeZIP20,.1
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles1024
Screening_Level_Reference_StandardMIL-STD-883
Seated_Height_Max11.5600
Self_RefreshNo
Standby_Current_Max0.004000000000000
Supply_Current_Max80.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch1.270
Terminal_PositionZIG-ZAG

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