5962-9062202MNX
Fast Page DRAM, 4MX1, 100ns, CMOS, PZIP20Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments 5962-9062202MNX is a 4M x 1 FAST PAGE DRAM with a maximum access time of 100ns. This CMOS component operates asynchronously and supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes. It features a 20-pin PZIP (Plastic Zip) package with through-hole mounting and a standard 1.27mm terminal pitch. Designed for operation across a wide temperature range from -55°C to +125°C, it utilizes a nominal 5V supply voltage, with a maximum of 5.5V. This memory device is suitable for applications requiring dense, high-speed data storage, commonly found in industrial and military systems.
Additional Information
Series: 5962-9062202RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 26.6700 |
| Width | 2.8500 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 100.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PZIP-T20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Seated_Height_Max | 11.4200 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 1.270 |
| Terminal_Position | ZIG-ZAG |
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