5962-9062201MTA
Fast Page DRAM, 4MX1, 120ns, CMOS, CDIP18Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments 5962-9062201MTA is a 4M x 1 Fast Page DRAM, operating at 120ns access time. This CMOS component features a 4,194,304-word organization with a 1-bit data width. It supports RAS-only, CAS-before-RAS, and hidden refresh modes for efficient memory management. The device is housed in an 18-lead Ceramic Dual In-line Package (CDIP) with a through-hole termination style and 2.54mm pitch. Operating from a 4.5V to 5.5V supply, it maintains functionality across an extended temperature range of -55°C to +125°C. This component finds application in aerospace, defense, and industrial systems requiring robust memory solutions.
Additional Information
Series: 5962-9062201RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.8600 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-CDIP-T18 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Screening_Level_Reference_Standard | MIL-STD-883 |
| Seated_Height_Max | 3.9300 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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