5962-9062201MNX
Fast Page DRAM, 4MX1, 120ns, CMOS, PZIP20Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments 5962-9062201 is a 4M x 1 Fast Page DRAM, specified with a maximum access time of 120ns. This CMOS component operates asynchronously and supports RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH modes. The device features a 5V nominal supply voltage, with a range of 4.5V to 5.5V, and operates across an industrial temperature range of -55°C to 125°C. Packaged in a 20-pin PZIP (Plastic Zip) format with through-hole mounting and a terminal pitch of 1.27mm, this component is suitable for applications in aerospace, defense, and industrial systems requiring robust memory solutions. The memory organization is 4M words by 1 bit.
Additional Information
Series: 5962-9062201RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 26.6700 |
| Width | 2.8500 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PZIP-T20 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 4MX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 20 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Seated_Height_Max | 11.4200 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 1.270 |
| Terminal_Position | ZIG-ZAG |
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