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5962-9061705MYX

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5962-9061705MYX

Fast Page DRAM, 256KX4, 70ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments 5962-9061705MYX is a 1Mbit Fast Page DRAM with a memory organization of 256K words by 4 bits. This CMOS component offers a maximum access time of 70ns and supports various refresh modes including RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH, operating asynchronously. The device features a supply voltage range of 4.5V to 5.5V and is designed for extended temperature operation from -55°C to 125°C. Packaged in a 20-terminal Small Outline (SON) package, the 5962-9061705MYX is suitable for applications in industrial and defense sectors requiring high reliability and performance.

Additional Information

Series: 5962-9061705RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width8.8900
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-XDSO-N20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialUNSPECIFIED
Package_CodeSON
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Seated_Height_Max2.5400
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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