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5962-9061705MYA

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5962-9061705MYA

Fast Page DRAM, 256KX4, 70ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments 5962-9061705MYA is a 256K x 4 Fast Page DRAM manufactured using CMOS technology. This component offers an access time of 70ns and supports multiple refresh modes including RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH. Its memory organization provides a total density of 1Mb, with asynchronous operation. The device features output characteristics of 3-State and is housed in a 20-terminal Rectangular Small Outline package. Operating across a temperature range of -55°C to 125°C, it is suitable for demanding applications. This component is commonly utilized in aerospace, defense, and industrial systems requiring robust memory solutions.

Additional Information

Series: 5962-9061705RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width8.8900
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDSO-N20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSON
Package_Equivalence_CodeSOLCC20/26,.35
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles512
Screening_Level_Reference_StandardMIL-STD-883
Seated_Height_Max2.5400
Standby_Current_Max0.004000000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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