5962-9061704MYX
Fast Page DRAM, 256KX4, 80ns, CMOS, CQCC18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments 5962-9061704 is a Fast Page DRAM with a 256K x 4 memory organization, providing a total density of 1Mb. This CMOS component offers an 80ns maximum access time and supports various refresh modes including RAS-only, CAS-before-RAS, and hidden refresh. The device is housed in an 18-terminal Ceramic Quad Flat Chip Carrier (CQCC) package, specified under MIL-STD-883 screening. Operating within a -55°C to +125°C temperature range, it is suitable for demanding applications in aerospace, defense, and industrial sectors where high reliability and performance are critical. The JEDEC standard designation for this package type is R-CQCC-N18.
Additional Information
Series: 5962-9061704RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 17.1450 |
| Width | 8.8900 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 80.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-CQCC-N18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | QCCN |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Screening_Level_Reference_Standard | MIL-STD-883 |
| Seated_Height_Max | 2.5400 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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