5962-9061703MYX
Fast Page DRAM, 256KX4, 100ns, CMOS, CQCC18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments 5962-9061703MYX is a Fast Page DRAM with a memory organization of 256K x 4 bits, resulting in a total density of 1 Megabit. This CMOS component offers a maximum access time of 100 nanoseconds. It supports RAS Only, CAS Before RAS, and Hidden Refresh modes for efficient memory management. The device operates asynchronously and is housed in an 18-terminal Ceramic Quad Flat Pack (CQFP) package, with a metal-sealed cofired ceramic body. Designed for harsh environments, it features a wide operating temperature range from -55°C to +125°C and adheres to MIL-STD-883 screening levels. This component is suitable for demanding applications in aerospace, defense, and industrial sectors requiring high reliability and performance.
Additional Information
Series: 5962-9061703RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 100.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-CQCC-N18 |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 256KX4 |
| Memory_Width | 4 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | QCCN |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Screening_Level_Reference_Standard | MIL-STD-883 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Position | QUAD |
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