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5962-9061703MRA

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5962-9061703MRA

Fast Page DRAM, 256KX4, 100ns, CMOS, CDIP20

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments' 5962-9061703MRA is a Fast Page DRAM with a memory organization of 256K x 4 bits, providing a total density of 1 Megabit. This component operates with a maximum access time of 100ns and utilizes CMOS technology. It supports various refresh modes, including RAS-ONLY, CAS-BEFORE-RAS, and HIDDEN REFRESH cycles, with 512 refresh cycles. The device features a common I/O type and asynchronous operation. Housed in a 20-lead Ceramic Dual In-line Package (CDIP20) with through-hole mounting, it is rated for an extended operating temperature range of -55°C to +125°C, meeting MIL-STD-883 screening standards. Applications include military, aerospace, and industrial systems requiring high reliability and performance.

Additional Information

Series: 5962-9061703RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-GDIP-T20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialCERAMIC, GLASS-SEALED
Package_CodeDIP
Package_Equivalence_CodeDIP20,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles512
Screening_Level_Reference_StandardMIL-STD-883
Seated_Height_Max5.0800
Standby_Current_Max0.004000000000000
Supply_Current_Max70.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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