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5962-9061702MYA

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5962-9061702MYA

Fast Page DRAM, 256KX4, 120ns, CMOS

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments 5962-9061702MYA is a Fast Page Mode DRAM with a memory organization of 256K x 4 bits. This component operates with a maximum access time of 120 ns and utilizes CMOS technology. It supports various refresh modes, including RAS-only, CAS-before-RAS, and hidden refresh cycles, with 512 refresh cycles specified. The I/O type is common, and the device is available in a 20-terminal Rectangular Small Outline package (SON, JEDEC code R-XDSO-N20) with a terminal pitch of 1.27 mm. Operating over a temperature range of -55°C to +125°C, it requires a supply voltage between 4.5V and 5.5V. This DRAM is suitable for applications within the aerospace and defense sectors requiring high-reliability components.

Additional Information

Series: 5962-9061702RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1450
Width8.8900
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-XDSO-N20
Memory_Density1048576.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization256KX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals20
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Output_Characteristics3-State
Package_Body_MaterialUNSPECIFIED
Package_CodeSON
Package_Equivalence_CodeSOLCC20/26,.35
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles512
Screening_Level_Reference_StandardMIL-STD-883
Seated_Height_Max2.5400
Standby_Current_Max0.004000000000000
Supply_Current_Max60.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormNO LEAD
Terminal_Pitch1.270
Terminal_PositionDual

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