TSM9ND50CI
MOSFET N-CH 500V 9A ITO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM9ND50CI is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 9 A at 25°C. With a maximum power dissipation of 50 W (Tc), it is suitable for demanding power management tasks. The TSM9ND50CI exhibits a low on-resistance (Rds On) of 900 mOhm at 2.3 A and 10 V, and a gate charge (Qg) of 24.5 nC at 10 V. Its input capacitance (Ciss) is a maximum of 1116 pF at 50 V. Packaged in an isolated TO-220 (ITO-220) through-hole configuration, this MOSFET operates across a temperature range of -55°C to 150°C. This device finds application in power supplies, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | ITO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1116 pF @ 50 V |
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