TSM9N90ECZ C0G
MOSFET N-CHANNEL 900V 9A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM9N90ECZ-C0G is a 900V N-Channel Power MOSFET designed for high-voltage applications. This component features a continuous drain current (Id) of 9A at 25°C and a maximum power dissipation of 89W at the same temperature. The Rds On is specified at a maximum of 1.4 Ohms at 4.5A and 10V gate drive. Key parameters include a Vgs(th) of 4V at 250µA and a maximum gate charge (Qg) of 72 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 2470 pF at 25V. The TSM9N90ECZ-C0G is housed in a TO-220-3 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. This device is commonly utilized in power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470 pF @ 25 V |
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