TSM9N90ECI C0G
MOSFET N-CH 900V 9A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM9N90ECI-C0G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 9A at 25°C (Tc). With a maximum power dissipation of 89W (Tc), it is suitable for high-power switching. The Rds On is specified at a maximum of 1.4 Ohm at 4.5A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 72 nC (max) at 10V and Input Capacitance (Ciss) of 2470 pF (max) at 25V. The TSM9N90ECI-C0G utilizes MOSFET technology and is housed in an isolated ITO-220AB package, facilitating through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This device finds application in power supplies, industrial motor control, and lighting solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470 pF @ 25 V |
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