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TSM9435CS RLG

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TSM9435CS RLG

MOSFET P-CHANNEL 30V 5.3A 8SOP

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Taiwan Semiconductor Corporation's TSM9435CS-RLG is a P-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 5.3A at 25°C, with a maximum power dissipation of 5.3W (Tc). The device offers a low on-resistance (Rds On) of 60mOhm at 5.3A and 10V gate-source voltage, optimized by drive voltages ranging from 4.5V to 10V. Its gate charge (Qg) is a maximum of 27 nC at 10V, and input capacitance (Ciss) is 551.57 pF at 15V. The TSM9435CS-RLG is housed in an 8-SOP package, suitable for surface mount applications, and operates within a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management, automotive, and industrial control systems requiring reliable switching performance. The product is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 5.3A, 10V
FET Feature-
Power Dissipation (Max)5.3W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds551.57 pF @ 15 V

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