TSM9409CS
-60V, -3.5A, SINGLE P-CHANNEL POManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM9409CS is a P-Channel Power MOSFET designed for general-purpose applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 3.5A at 25°C. The Rds(On) is specified at a maximum of 155mOhm at 3.5A and 10V Vgs. With a maximum power dissipation of 3W (Ta), it is suitable for various power management tasks. The TSM9409CS is housed in an 8-SOP package, facilitating surface mount assembly. Key parameters include a Gate Charge (Qg) of 6nC at 10V and an Input Capacitance (Ciss) of 540pF at 30V. This component finds application in industries such as consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 30 V |