TSM900N10CH X0G
MOSFET N-CH 100V 15A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation's TSM900N10CH-X0G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C, with a maximum power dissipation of 50W (Tc). The TSM900N10CH-X0G exhibits a low on-resistance (Rds On) of 90mOhm at 5A and 10V, and a gate charge (Qg) of 9.3 nC at 10V, facilitating high-speed switching. It is housed in a TO-251 (IPAK) package with through-hole mounting, suitable for demanding thermal management. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in industrial, automotive, and consumer electronics power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 50 V |
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