TSM900N06CH X0G
MOSFET N-CHANNEL 60V 11A TO251Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM900N06CH-X0G is an N-channel MOSFET designed for power switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 11A at 25°C. The Rds On is specified at a maximum of 90mOhm when driven at 10V with a 6A drain current. With a maximum power dissipation of 25W (Tc), it is housed in a TO-251 (IPAK) package with through-hole mounting. Key parameters include a gate charge (Qg) of 9.3 nC and input capacitance (Ciss) of 500 pF. This MOSFET is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V |