TSM8N80CZ C0G
MOSFET N-CHANNEL 800V 8A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM8N80CZ-C0G is an 800V N-Channel MOSFET designed for demanding applications. This through-hole component, packaged in a TO-220-3 configuration, offers a continuous drain current of 8A at 25°C with a maximum power dissipation of 40.3W. Key electrical parameters include a Drain to Source Voltage (Vdss) of 800V, a maximum Rds On of 1.05 Ohm at 4A and 10V gate drive, and a gate charge of 41 nC. Input capacitance (Ciss) is rated at 1921 pF. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1921 pF @ 25 V |
Request a Quote
Clients Also Buy
TSM70N380CH C5G
MOSFET N-CH 700V 11A TO251
TSM043NB04LCZ C0G
40V, 124A, SINGLE N-CHANNEL POWE
TSM60N900CP ROG
MOSFET N-CH 600V 4.5A TO252
