TSM8N80CI C0G
MOSFET N-CH 800V 8A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM8N80CI-C0G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 8A at 25°C. With a maximum Power Dissipation of 40.3W (Tc), it is suitable for high-power switching. The Rds On is specified at a maximum of 1.05 Ohms at 4A and 10V, ensuring efficient conduction. Key parameters include a Gate Charge (Qg) of 41 nC at 10V and Input Capacitance (Ciss) of 1921 pF at 25V. The component is housed in an isolated ITO-220AB package, facilitating ease of mounting via its through-hole configuration. The TSM8N80CI-C0G finds utility in industries such as power supplies, industrial motor control, and lighting solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1921 pF @ 25 V |
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