TSM8N70CI C0
MOSFET N-CH 700V 8A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM8N70CI-C0 is a 700V N-Channel Power MOSFET designed for demanding power applications. This component offers a continuous drain current of 8A at 25°C (Tc) and a maximum power dissipation of 40W (Tc). Featuring a low on-resistance of 900mOhm at 4A and 10V, the TSM8N70CI-C0 is suitable for applications requiring efficient switching. The device is housed in an isolated ITO-220AB package for thermal management and ease of mounting via its through-hole design. Typical applications include power supplies, lighting, and motor control systems. It has a gate charge of 32 nC at 10V and an input capacitance of 2006 pF at 25V. The maximum gate-source voltage is ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2006 pF @ 25 V |
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