TSM8N50CP ROG
MOSFET N-CH 500V 7.2A TO252Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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The Taiwan Semiconductor Corporation TSM8N50CP-ROG is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 7.2 A at 25°C, dissipating up to 89 W. With a maximum On-Resistance (Rds On) of 850 mOhm at 3.6 A and 10 V, it offers efficient power switching. Key parameters include a Gate Charge (Qg) of 26.6 nC at 10 V and an Input Capacitance (Ciss) of 1595 pF at 25 V. The device is housed in a surface-mount TO-252 (DPAK) package, supplied on tape and reel. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power supply units, lighting control, and general-purpose power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1595 pF @ 25 V |
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