TSM85N10CZ C0G
MOSFET N-CHANNEL 100V 81A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM85N10CZ-C0G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 81A at 25°C. The TSM85N10CZ-C0G offers a low on-resistance of 10mOhm at 40A and 10V, with a maximum power dissipation of 210W at 25°C (Tc). Key electrical characteristics include a Gate Charge (Qg) of 154 nC (max) at 10V and an Input Capacitance (Ciss) of 3900 pF (max) at 30V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage is ±20V. This component is housed in a TO-220 package suitable for through-hole mounting and operates across an industrial temperature range of -55°C to 150°C. The TSM85N10CZ-C0G is utilized in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 30 V |
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