TSM80N400CF C0G
MOSFET N-CH 800V 12A ITO220SManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM80N400CF-C0G is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 12 A at 25°C. The Rds On is specified at a maximum of 400 mOhm at 2.7 A and 10 V gate-source voltage. The device offers a gate charge (Qg) of 51 nC at 10 V and an input capacitance (Ciss) of 1848 pF at 100 V. It is packaged in an ITO-220S (TO-220-3 Full Pack) with a through-hole mounting type. With a maximum power dissipation of 69 W at 25°C (Tc), this MOSFET operates across a temperature range of -55°C to 150°C. This component is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1848 pF @ 100 V |
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