TSM80N1R2CI C0G
MOSFET N-CH 800V 5.5A ITO220ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Taiwan Semiconductor Corporation TSM80N1R2CI-C0G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 5.5A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 1.2 Ohms at 1.8A and 10V gate-source voltage. With a gate charge (Qg) of 19.4 nC at 10V and input capacitance (Ciss) of 685 pF at 100V, it is suitable for various power switching circuits. This MOSFET is housed in an isolated ITO-220AB package, facilitating through-hole mounting. Its maximum power dissipation is 25W at 25°C (Tc), and it operates within a temperature range of -55°C to 150°C (TJ). Applications include power supplies, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 685 pF @ 100 V |
Request a Quote
Clients Also Buy
TSM220NB06CR RLG
MOSFET N-CH 60V 8A/35A 8PDFN
TSM7NC60CF C0G
MOSFET N-CH 600V 7A ITO220S
TSM900N06CP ROG
MOSFET N-CHANNEL 60V 11A TO252
