TSM80N08CZ C0G
MOSFET N-CHANNEL 75V 80A TO220Manufacturer: Taiwan Semiconductor Corporation
Categories: Single FETs, MOSFETs
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Taiwan Semiconductor Corporation TSM80N08CZ-C0G is an N-Channel Power MOSFET designed for demanding applications. This component features a 75V drain-source voltage and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 113.6W (Tc). The low on-resistance of 8mOhm at 40A and 10V gate drive voltage ensures efficient power transfer. Input capacitance (Ciss) is specified at 3905pF maximum at 30V, and gate charge (Qg) is 91.5nC maximum at 10V. The TSM80N08CZ-C0G utilizes a through-hole mounting type in a standard TO-220-3 package. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 113.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 91.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3905 pF @ 30 V |
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